HN2E04F 2014-03-01 1 toshiba multi chip discrete device HN2E04F super high speed switching application audio frequency amplifier application audio low noise ampl ifier application q1 high voltage : v ceo = 120v high dc current gain : h fe = 200 to 700 good h fe linearity : h fe (i c = 0.1ma)/ h fe (i c = 2ma) = 0.95 q2 low forward voltage drop : v f(3) = 0.98v (typ.) fast reverse recovery time : t rr = 1.6ns (typ.) low total capacitance : c t = 0.5pf (typ.) q1 (transistor) : 2sa1587 equivalent q2 (diode) : 1ss352 equivalent q1 (transistor) absolute maximum ratings ( ta = 25c ) characteristic symbol rating unit collector-base voltage v cbo ?120 v collector-emitter voltage v ceo ?120 v emitter-base voltage v ebo ?5 v collector current i c ?100 ma base current i b ?20 ma q2 (diode) absolute maximum ratings ( ta = 25c ) characteristic symbol rating unit maximum (peak) reverse voltage v rm 85 v reverse voltage v r 80 v maximum (peak) forward current i fm 300 ma average forward current i o 100 ma surge current (10ms) i fsm 1 a absolute maximum ratings (ta = 25c) (q1, q2 common) characteristic symbol rating unit collector power dissipation p c * 300 mw junction temperature t j 125 c storage temperature range t stg ?55 to 125 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this pr oduct to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and in dividual reliability data (i.e. reliability test report and estimated failure rate, etc). *total rating: power dissipation per element should not exceed 200mw per element. 1.nc 2.emitter 3.cathode 4.anode 5.collector 6.base jedec D jeita D toshiba 2-3n1e weight: 0.015g (typ.) unit: mm start of commercial production 2000-02
HN2E04F 2014-03-01 2 q1 (transistor) electrical characteristics (ta = 25c) characteristic symbol test circuit test condition min typ. max unit collector cut-off current i cbo D v cb = ?120v, i e = 0 D D ? 100 na emitter cut-off current i ebo D v eb = ?5v, i c = 0 D D ? 100 na dc current gain h fe * D v ce = ? 6v, i c = ?2ma 200 D 700 collector-emitter saturation voltage v ce(sat) D i c = ?10ma, i b = ?1ma D D ? 0.3 v transition frequency f t D v ce = ? 6v, i c = ? 1ma D 100 D mhz collector output capacitance c ob D v cb = ?10v, i e = 0, f=1mhz D 4 D pf noise figure nf D v ce = ?6 v, i c = ?0.1 ma f = 1 khz, r g = 10 k D 1.0 D db *: h fe classifications gr(g): 200 to 400 , bl(l ): 350 to 700 ( )marking symbol q2 (diode) electrical characteristics (ta = 25c) characteristic symbol test circuit test condition min typ. max unit v f (1) D i f = 1ma D 0.62 D v f (2) D i f = 10ma D 0.75 D forward voltage v f (3) D i f = 100ma D 0.98 1.20 v i r (1) D v r = 30v D D 0.1 reverse current i r (2) D v r = 80v D D 0.5 a total capacitance c t D v r = 0, f = 1mhz D 0.5 D pf reverse recovery time t rr D i f = 10ma (fig.1) D 1.6 D ns marking equivalent circuit (top view) 654 123 q2 q1 h fe rank type name 32g
HN2E04F 2014-03-01 3 fig. 1: reverse recovery time (t rr ) test circuit
HN2E04F 2014-03-01 4 q1 collector current i c (ma) v ce (sat) ? i c collector-emitter saturation v ce (sat) (v) ? 0.1 ? 0.5 ? 1 ? 30 ? 0.3 ? 0.1 ? 0.01 ? 3 ? 10 ? 0.3 ? 1 ta = 100c 25 ? 25 ? 0.03 common emitter i c /i b = 10 ? 0.05 collector current i c (ma) h fe ? i c dc current gain h fe ? 25 common emitter v ce = ? 6 v ? 0.1 3000 ? 1 ? 30 ? 0.3 500 100 ? 3 ? 10 1000 5000 ta = 100c 25 300 collector-base voltage v cb (v) c ob ? v cb collector output capacitance c ob (pf) ? 1 5 ? 10 ? 3 3 1 ? 30 ? 100 10 i e = 0 f = 1 mhz ta = 25c i c ? v ce collector emitter voltage v ce (v) collector current i c (ma) common emitter ta = 25c 0 ? 8 ? 4 ? 2 0 ? 1 ? 5 ? 3 i b = ? 1 a ? 6 ? 10 0 ? 10 ? 2 ? 4 ? 9 ? 8 ? 7 ? 6 ? 5 ? 4 ? 3 ? 2 i c ? v be base-emitter voltage v be (v) common emitter v ce = ? 6 v 0 ? 0.8 ? 0.4 ? 1.0 0 ? 15 ? 20 ? 10 ta = 100c 25 ? 25 ? 0.6 ? 0.2 ? 25 ? 30 ? 5 collector current i c (ma)
HN2E04F 2014-03-01 5
HN2E04F 2014-03-01 6 q2
HN2E04F 2014-03-01 7 q1, q2 common ambient temperature ta ( c) p c * ? ta collector power disspation p c (mw) 0 0 100 300 200 500 400 150 100 125 50 75 25 175 *total rating.
HN2E04F 2014-03-01 8 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively "toshiba"), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively "product") without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba's written permission, reproduction is permissible only if reproduction is wit hout alteration/omission. ? though toshiba works continually to improve product's quality a nd reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid sit uations in which a malfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, customers mu st also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, th is document, the specifications , the data sheets and application notes for product and the precautions and condi tions set forth in the "toshiba semiconductor reliability handbook" and (b) the instructio ns for the application with which the product will be used with or for. customers are solely responsible for all aspects of their own product design or applications, including but not lim ited to (a) determining the appropriateness of the use of this product in such des ign or applications; (b) evaluating and dete rmining the applicability of any information contained in this document, or in charts, dia grams, programs, algorithms, sample application circuits, or any other referenced document s; and (c) validating all operating paramete rs for such designs and applications. toshiba assumes no liability for customers' product design or applications. ? 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